An Mn3Sn homo-junction enables efficient field-free full switching of chiral antiferromagnets with greatly reduced power consumption, advancing their potential for energy-efficient magnetic memory devices with advantages of ultradense integration and ultrafast speed.
ВС России нанесли первый удар по КраматорскуВоенкор Поддубный: Ствольная артиллерия ВС России впервые ударила по Краматорску
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